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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD1713 description collector-emitter breakdown voltage- : v (br)ceo = 120v(min) good linearity of h fe wide area of safe operation complement to type 2sb1158 applications designed for high power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 5 v i c collector current-continuous 6 a i cp collector current-pulse 10 a collector power dissipation @ t c =25 70 p c collector power dissipation @ t a =25 3 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1713 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = 4a; i b = 0.4a b 2.0 v v be (on) base -emitter on voltage i c = 4a; v ce = 5v 1.8 v i cbo collector cutoff current v cb = 120v; i e = 0 50 a i ebo emitter cutoff current v eb = 3v; i c = 0 50 a h fe-1 dc current gain i c = 20ma; v ce = 5v 20 h fe-2 dc current gain i c = 1a; v ce = 5v 60 200 h fe-3 dc current gain i c = 4a; v ce = 5v 20 c ob collector output capacitance i e = 0; v cb = 10v; f= 1mhz 85 pf f t current-gain?bandwidth product i c = 0.5a; v ce = 5v 20 mhz ? h fe-2 classifications q s p 60-120 80-160 100-200 isc website www.iscsemi.cn 2 |
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